0 Martin, Suzanne Hitt, Lorin M. Rosenberg, James 1989 IEEE Electron Device Letters 10 7 325-326 The fabrication and performance of p-channel germanium MOSFET's having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no "looping" and indicate a peak room temprature channel mobility of 770c22/Vs. These results provide further evidence that a high-performance germanium CMOS technology is possible. Fulltext not available. See journal for a copy.